US 12,193,206 B2
Memory device
Xiu-Li Yang, Shanghai (CN); He-Zhou Wan, Shanghai (CN); and Yan-Bo Song, Shanghai (CN)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); and TSMC CHINA COMPANY LIMITED, Shanghai (CN)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); and TSMC CHINA COMPANY LIMITED, Shanghai (CN)
Filed on Jul. 29, 2022, as Appl. No. 17/876,888.
Application 17/876,888 is a continuation of application No. 17/225,774, filed on Apr. 8, 2021, granted, now 11,462,551.
Claims priority of application No. 202011468190.1 (CN), filed on Dec. 14, 2020.
Prior Publication US 2022/0367484 A1, Nov. 17, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/418 (2006.01); H10B 10/00 (2023.01)
CPC H10B 10/18 (2023.02) [G11C 11/418 (2013.01); H10B 10/12 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a first memory array;
a first isolation cell abutting a first side of the first memory array;
a first edge cell array abutting a second side, opposite to the first side, of the first memory array, wherein a first width of the first isolation cell is different from a second width of the first edge cell array;
a second memory array arranged at a first side, opposite to the first memory array, of the first isolation cell;
a second edge cell array, wherein the second memory array is sandwiched between the second edge cell array and the first isolation cell; and
a plurality of first word lines passing through the first edge cell array, the first memory array and being terminated at the first isolation cell.