US 12,192,657 B2
Solid-state image sensor and imaging device
Kazuki Hizu, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 18/020,733
Filed by Sony Semiconductor Solutions Corporation, Kanagawa (JP)
PCT Filed Aug. 4, 2021, PCT No. PCT/JP2021/028874
§ 371(c)(1), (2) Date Feb. 10, 2023,
PCT Pub. No. WO2022/064867, PCT Pub. Date Mar. 31, 2022.
Claims priority of application No. 2020-161662 (JP), filed on Sep. 28, 2020.
Prior Publication US 2023/0300494 A1, Sep. 21, 2023
Int. Cl. H04N 25/77 (2023.01); G01J 1/00 (2006.01); G01J 1/14 (2006.01); H01L 27/146 (2006.01); H04N 25/131 (2023.01); H04N 25/133 (2023.01); H04N 25/709 (2023.01); H04N 25/773 (2023.01); H04N 25/79 (2023.01)
CPC H04N 25/77 (2023.01) [H01L 27/14634 (2013.01); H04N 25/709 (2023.01)] 20 Claims
OG exemplary drawing
 
1. A solid-state image sensor comprising:
a light-receiving substrate on which a plurality of avalanche photodiodes is disposed, each of the avalanche photodiodes generating a current corresponding to incidence of a photon; and
a logic substrate on which a counter is disposed, the counter counting a number of the photons on a basis of the current of a selected avalanche photodiode among the plurality of avalanche photodiodes, wherein
the plurality of avalanche photodiodes includes first and second avalanche photodiodes, and
there are further disposed, on the logic substrate, a detection circuit that generates a pulse signal on a basis of a voltage according to the current and outputs the pulse signal to the counter, a first selection transistor that opens and closes a path between one end of the first avalanche photodiode and the detection circuit, a second selection transistor that opens and closes a path between one end of the second avalanche photodiode and the detection circuit, and a control circuit that controls a voltage of each gate of the first and second selection transistors.