US 12,191,858 B2
Thermal-electric logic integrated circuit and use of said integrated circuit
Janos Mizsei, Budapest (HU); and Jyrki Lappalainen, Oulu (FI)
Appl. No. 18/013,600
Filed by BUDAPESTI MUSZAKI ES GAZDASAGTUDOMANYI EGYETEM, Budapest (HU)
PCT Filed Jun. 3, 2021, PCT No. PCT/HU2021/050038
§ 371(c)(1), (2) Date Dec. 29, 2022,
PCT Pub. No. WO2022/003379, PCT Pub. Date Jan. 6, 2022.
Claims priority of application No. P2000211 (HU), filed on Jun. 29, 2020.
Prior Publication US 2023/0253968 A1, Aug. 10, 2023
Int. Cl. H03K 19/23 (2006.01); H03K 19/02 (2006.01)
CPC H03K 19/23 (2013.01) [H03K 19/02 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A thermal-electric integrated logic circuit, comprising:
at least two inputs (InA-InH,, In/Outth1, In/Outth2, In/Outth3),
at least one output (Out, In/Outth1, In/Outth2, In/Outth3),
a series member consisting of a resistor (R0) and a metal-insulator transition capable resistor (RMIT) used as a vanadium oxide (VO2) switching element connected to a supply voltage (UCC), and
where the at least one output (Out) is made up by the common point of the resistor (R0) of the series member and the metal-insulator transition capable resistor (RMIT) used as the VO2 switching element, and
where the at least two inputs (InA-InH, In/Outth1, In/Outth2, In/Outth3) comprise at least one electric input (InA-InH) and at least one thermal input (In/Outth2, In/Outth3),
whereas
in case of a NOR logic gate circuit, at least one input resistor (R1-R6) constituting a thermal input of the NOR logic gate circuit is arranged closer to the metal-insulator transition capable resistor (RMIT) used as the VO2 switching element of the NOR logic gate circuit than a thermal diffusion length (Lth),
in case of a NAND logic gate circuit, the at least one input resistor (R1-R6) constituting a thermal input of the NAND logic gate circuit is arranged farther from the metal-insulator transition capable resistor (RMIT) used as the VO2 switching element of the NAND logic gate circuit than a thermal diffusion length (Lth),
in case of a majority logic gate circuit, all of the excited input resistors (R1-R6) are arranged at an identical distance corresponding to the thermal diffusion length (Lth) from the metal-insulator transition capable resistor (RMIT) of the majority logic gate circuit used as the VO2 switching element;
in case of an extended majority logic gate circuit, all of the excited input resistors (R1-R6) are arranged at an identical distance, less than the thermal diffusion length (Lth) or greater than the thermal diffusion length (Lth), from the metal-insulator transition capable resistor (RMIT) used as the VO2 switching element;
further providing a weighted majority logic gate circuit, at least one excitation input resistor is arranged at a distance smaller than the thermal diffusion length (Lth) from the metal-insulator transition capable resistor (RMIT) of the weighted majority logic gate circuit used as the VO2 switching element, and at least two excitation input resistors are arranged at a distance greater than the thermal diffusion length (Lth) from the metal-insulator transition capable resistor (RMIT) used as the VO2 switching element.