| CPC H03K 17/0822 (2013.01) [H03K 17/08122 (2013.01); H03K 17/6871 (2013.01)] | 13 Claims |
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1. A determination device used for a semiconductor switch including a junction field-effect transistor having a gate and a source corresponding to the gate, the device comprising:
a resistor that has a first end and a second end, the first end being connected to the gate; and
a determination circuit that determines that an overcurrent is flowing through the semiconductor switch when there is a predetermined change in a gate-source voltage of the junction field-effect transistor in a range smaller than a gate drive voltage given between the second end of the resistor and the source, wherein
the semiconductor switch is a bidirectional switch including two junction field-effect transistors,
the two junction field-effect transistors include a first junction field-effect transistor and a second junction field-effect transistor,
the determination device includes two resistors, and two determination circuits,
the two resistors include a first resistor corresponding to the first junction field-effect transistor and a second resistor corresponding to the second junction field-effect transistor, and
the two determination circuits include a first determination circuit corresponding to the first junction field-effect transistor and a second determination circuit corresponding to the second junction field-effect transistor.
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