US 12,191,821 B2
Group III nitride-based monolithic microwave integrated circuits having multi-layer metal-insulator-metal capacitors
Jeremy Fisher, Raleigh, NC (US); Dan Namishia, Wake Forest, NC (US); and Scott Sheppard, Chapel Hill, NC (US)
Assigned to MACOM Technology Solutions Holdings, Inc., Lowell, MA (US)
Filed by MACOM Technology Solutions Holdings, Inc., Lowell, MA (US)
Filed on Mar. 8, 2022, as Appl. No. 17/688,952.
Prior Publication US 2023/0291367 A1, Sep. 14, 2023
Int. Cl. H03F 3/195 (2006.01); H01L 23/66 (2006.01); H03F 1/56 (2006.01)
CPC H03F 3/195 (2013.01) [H01L 23/66 (2013.01); H03F 1/565 (2013.01); H01L 2223/6655 (2013.01); H03F 2200/451 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a Group III nitride based semiconductor layer structure;
a first metal layer that is directly on an upper surface of the Group III nitride based semiconductor layer structure;
a first dielectric layer that is directly on an upper surface of the first metal layer;
a second metal layer that is directly on an upper surface of the first dielectric layer;
a second dielectric layer that is directly on an upper surface of the second metal layer;
a third dielectric layer that is on an upper surface of the second dielectric layer;
a third metal layer that is directly on an upper surface of the second dielectric layer and directly on an upper surface of the third dielectric layer, wherein the first metal layer, the first dielectric layer and the second metal layer form a first capacitor, and the second metal layer, the second dielectric layer and the third metal layer form a second capacitor that is stacked on top of the first capacitor.