	US 12,191,626 B1
	Vertically emitting laser devices and chip-scale-package laser devices and laser-based, white light emitting devices
Melvin McLaurin, Santa Barbara, CA (US)
Assigned to Kyocera SLD Laser, Inc., Goleta, CA (US)
Filed by KYOCERA SLD Laser, Inc., Goleta, CA (US)
Filed on Aug. 2, 2021, as Appl. No. 17/444,273.
Claims priority of provisional application 63/059,465, filed on Jul. 31, 2020.
Int. Cl. H01S 5/02 (2006.01); H01L 21/78 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01); H01L 33/00 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01); H01L 33/62 (2010.01); H01S 5/00 (2006.01); H01S 5/02255 (2021.01); H01S 5/028 (2006.01); H01S 5/183 (2006.01); H01S 5/42 (2006.01)

CPC H01S 5/0217 (2013.01) [H01L 21/7813 (2013.01); H01L 29/2003 (2013.01); H01L 29/7786 (2013.01); H01L 29/8613 (2013.01); H01L 29/872 (2013.01); H01L 33/0093 (2020.05); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/62 (2013.01); H01S 5/0087 (2021.01); H01S 5/02255 (2021.01); H01S 5/028 (2013.01); H01S 5/18305 (2013.01); H01S 5/18344 (2013.01); H01S 5/18369 (2013.01); H01S 5/423 (2013.01); H01L 2933/0066 (2013.01)]

14 Claims

1. A method for manufacturing a semiconductor light emitting device, the method comprising:

providing a gallium and nitrogen containing substrate having a surface region;

forming a release material overlying the surface region;

forming a gallium and nitrogen containing epitaxial material overlying the release material, the epitaxial material comprising at least an intrinsic-type or unintentionally doped gallium and nitrogen containing region or at least an n-type gallium and nitrogen containing region or at least a p-type gallium and nitrogen containing region or at least a combination of one or more n-type gallium and nitrogen containing regions, p-type gallium and nitrogen containing regions, or unintentionally doped gallium and nitrogen containing regions;

patterning the epitaxial material and the release material to form mesas separated by a first pitch and arranged in an array, each mesa corresponding to at least one semiconductor device;

forming a bonding media overlying at least a portion of the mesas;

bonding the bonding media to a carrier wafer to form bonded structures;

releasing the bonded structures by at least partially removing the release material to transfer a plurality of mesas to the carrier wafer, wherein each pair of transferred mesas is separated by a second pitch that is greater than the first pitch; and

processing at least one of the plurality of mesas to form the semiconductor light emitting device having a cavity with facets on each end, at least one of the facets being an angled facet that is at an angle relative to the other facet, the angled facet configured to provide an intra-cavity beam deflector that alters a path of a light beam within the cavity to facilitate emission of the light beam from the cavity.