US 12,191,426 B2
Chip-on-board type photoelectric device
Debing Huang, Xiamen (CN); Zhikun Shen, Xiamen (CN); Yiqun Li, Danville, CA (US); Gang Wang, Xiamen (CN); and Xianglong Yuan, Manteca, CA (US)
Assigned to BRIDGELUX OPTOELECTRONICS (XIAMEN) CO., LTD., Xiamen (CN)
Filed by KAISTAR Lighting (Xiamen) Co., Ltd., Xiamen (CN)
Filed on Jan. 27, 2022, as Appl. No. 17/585,608.
Claims priority of application No. 202110172249.0 (CN), filed on Feb. 8, 2021.
Prior Publication US 2022/0254963 A1, Aug. 11, 2022
Int. Cl. H01L 33/50 (2010.01); H01L 27/15 (2006.01); H01L 33/52 (2010.01)
CPC H01L 33/502 (2013.01) [H01L 27/156 (2013.01); H01L 33/52 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A chip-on-board (COB) type photoelectric device, comprising:
a metallic substrate, comprising: a photoelectric element fixing area;
a dam, disposed on the metallic substrate and surrounding the photoelectric element fixing area;
a plurality of first photoelectric elements, disposed on the metallic substrate and in the photoelectric element fixing area;
a KSF phosphor based layer, disposed on the plurality of first photoelectric elements and being not in contact with the metallic substrate, wherein the KSF phosphor based layer comprises a KSF phosphor; and
an isolation layer, disposed in the dam and covering the KSF phosphor based layer; wherein the isolation layer comprises:
a first isolation layer, disposed on the metallic substrate, and a height of the first isolation layer in a direction perpendicular to the metallic substrate is not higher than a height of each of the plurality of first photoelectric elements in the direction perpendicular to the metallic substrate; and
a second isolation layer, disposed over the KSF phosphor based layer.