US 12,191,419 B2
Semiconductor element and semiconductor device
Shota Kitamura, Kanagawa (JP); Tetsuji Yamaguchi, Kanagawa (JP); Akihiro Wakahara, Aichi (JP); and Keisuke Yamane, Aichi (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/753,585
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Jun. 4, 2020, PCT No. PCT/JP2020/022130
§ 371(c)(1), (2) Date Mar. 8, 2022,
PCT Pub. No. WO2021/053893, PCT Pub. Date Mar. 25, 2021.
Claims priority of application No. 2019-167987 (JP), filed on Sep. 17, 2019.
Prior Publication US 2022/0336703 A1, Oct. 20, 2022
Int. Cl. H01L 33/30 (2010.01); H01L 33/40 (2010.01)
CPC H01L 33/30 (2013.01) [H01L 33/40 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor element, comprising:
a silicon substrate;
a first compound semiconductor layer on a back surface of the silicon substrate;
a second compound semiconductor layer on the first compound semiconductor layer; and
a first electrode on a front surface of the silicon substrate, wherein
the back surface of the silicon substrate is different from the front surface of the silicon substrate, and
the first electrode is configured to control a movement of charges between the silicon substrate and the second compound semiconductor layer via the first compound semiconductor layer.