US 12,191,412 B2
Digital doping and development of a transparent conductor
Farida Selim, Bowling Green, OH (US)
Assigned to Bowling Green State University, Bowling Green, OH (US)
Filed by Bowling Green State University, Bowling Green, OH (US)
Filed on Oct. 15, 2020, as Appl. No. 17/071,518.
Claims priority of provisional application 62/915,968, filed on Oct. 16, 2019.
Prior Publication US 2021/0119068 A1, Apr. 22, 2021
Int. Cl. H01L 31/032 (2006.01); H01L 31/18 (2006.01)
CPC H01L 31/0321 (2013.01) [H01L 31/18 (2013.01); H01L 31/1884 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method for doping an oxide semiconductor material, wherein the method comprises:
(i) depositing a first single atomic layer of a first oxide semiconductor on a substrate;
(ii) depositing at least a second single atomic layer of the first oxide semiconductor directly on the first single atomic layer to form a plurality of atomic layers of the first oxide semiconductor on the substrate; and
(iii) depositing one atomic layer of a first dopant material on the plurality of atomic layers of the first oxide semiconductor using H2O as an oxidant to obtain a doped oxide semiconductor material, wherein the first dopant material comprises gallium or indium;
(iv) depositing one atomic layer of a second dopant material directly on the one atomic layer of the first dopant material; and
(v) repeating steps (i)-(iv) so as to obtain a doped oxide semiconductor material, wherein the doped oxide semiconductor material is a film having the first dopant material present in an amount of about 1 at % and the second dopant material present in an amount of about 1 at %.