US 12,191,406 B2
Solar cell, method for manufacturing solar cell, and solar cell module
Hiroshi Hashigami, Annaka (JP); Takenori Watabe, Annaka (JP); and Hiroyuki Otsuka, Annaka (JP)
Assigned to SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed by Shin-Etsu Chemical Co., Ltd., Tokyo (JP)
Filed on Nov. 16, 2022, as Appl. No. 17/988,063.
Application 17/988,063 is a division of application No. 16/423,325, filed on May 28, 2019, granted, now 11,545,588.
Application 16/423,325 is a division of application No. 16/014,691, filed on Jun. 21, 2018, granted, now 11,538,944.
Application 16/014,691 is a division of application No. 13/496,596, granted, now 10,032,940, issued on Jul. 24, 2018, previously published as PCT/JP2010/058706, filed on May 24, 2010.
Claims priority of application No. 2009-217382 (JP), filed on Sep. 18, 2009.
Prior Publication US 2023/0074411 A1, Mar. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01)
CPC H01L 31/02167 (2013.01) [H01L 31/022425 (2013.01); H01L 31/068 (2013.01); H01L 31/1868 (2013.01); Y02E 10/547 (2013.01); Y02P 70/50 (2015.11)] 7 Claims
OG exemplary drawing
 
1. A solar cell comprising:
a semiconductor substrate of a p-type which has a pn junction and has an n-type layer on a light receiving surface of the semiconductor substrate on one side thereof and a non-light receiving surface on another side thereof;
a passivation layer consisting essentially of an amorphous aluminum oxide and having a thickness of 1 to 20 nm in contact with the p-type substrate in the non-light receiving surface of the semiconductor substrate;
a first dielectric film of a material selected from the group consisting of silicon nitride, silicon oxide, silicon carbide and titanium oxide on the passivation layer;
a second dielectric film of a material selected from the group consisting of silicon nitride, silicon oxide, silicon carbide and titanium oxide on the light receiving surface of the semiconductor substrate;
a first power extraction electrode on said non-light receiving surface which is a sintered product of a first conductive metal paste containing silver powder, glass frit and organic binder wherein the first power extraction electrode is in electrical contact with the p-type surface of the semiconductor substrate by firing-through the first dielectric film and the passivation layer; and
a second power extraction electrode on said light receiving surface which is a sintered product of a second conductive metal paste containing silver powder, glass frit and organic binder wherein the second power extraction electrode is in electrical contact with the n-type layer of the semiconductor substrate by firing-through the second dielectric film,
wherein the first and second electrodes contain at least one element selected from the group consisting of B, Na, K, Ca, Si, V, Zn, Zr, Cd, Sn, Ba, Ta, Tl, Pb and Bi.