US 12,191,404 B2
Solar cell having conductive contacts in alignment with recast signatures
Gabriel Harley, Mountain View, CA (US); David D. Smith, Campbell, CA (US); and Peter John Cousins, Menlo Park, CA (US)
Assigned to MAXEON SOLAR PTE. LTD., Singapore (SG)
Filed by MAXEON SOLAR PTE. LTD., Singapore (SG)
Filed on Oct. 12, 2021, as Appl. No. 17/498,979.
Application 17/498,979 is a continuation of application No. 16/276,381, filed on Feb. 14, 2019, granted, now 11,152,518.
Application 16/276,381 is a continuation of application No. 14/793,356, filed on Jul. 7, 2015, granted, now 10,211,349, issued on Feb. 19, 2019.
Application 14/793,356 is a continuation of application No. 14/334,401, filed on Jul. 17, 2014, granted, now 9,087,939, issued on Jul. 21, 2015.
Application 14/334,401 is a continuation of application No. 13/669,147, filed on Nov. 5, 2012, granted, now 8,785,236, issued on Jul. 22, 2014.
Application 13/669,147 is a continuation of application No. 12/895,437, filed on Sep. 30, 2010, granted, now 8,324,015, issued on Dec. 4, 2012.
Claims priority of provisional application 61/265,652, filed on Dec. 1, 2009.
Prior Publication US 2022/0029038 A1, Jan. 27, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 31/02 (2006.01); H01L 31/0224 (2006.01); H01L 31/068 (2012.01)
CPC H01L 31/02008 (2013.01) [H01L 31/022441 (2013.01); H01L 31/0682 (2013.01); Y02E 10/547 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A solar cell comprising:
a first dielectric layer above a silicon substrate;
a material layer above the first dielectric layer, the material layer having a first doped region and a plurality of recast signatures;
a second dielectric layer above the material layer; and
a plurality of conductive contacts through the second dielectric layer with each of the plurality of conductive contacts being in alignment with one of the plurality of recast signatures in the material layer.