US 12,191,402 B2
Method of manufacturing a semiconductor transducer device with multilayer diaphragm and semiconductor transducer device with multilayer diaphragm
Alessandro Faes, Premstätten (AT); Jörg Siegert, Graz (AT); Willem Frederik Adrianus Besling, JN Eindhoven (NL); and Remco Henricus Wilhelmus Pijnenburg, AE Hoogeloon (NL)
Assigned to Sciosense B.V., AE Eindhoven (NL)
Appl. No. 17/288,847
Filed by Sciosense B.V., AE Eindhoven (NL)
PCT Filed Oct. 24, 2019, PCT No. PCT/EP2019/079068
§ 371(c)(1), (2) Date Apr. 26, 2021,
PCT Pub. No. WO2020/094412, PCT Pub. Date May 14, 2020.
Claims priority of application No. 18205008 (EP), filed on Nov. 7, 2018.
Prior Publication US 2021/0359143 A1, Nov. 18, 2021
Int. Cl. H01L 29/84 (2006.01); H01L 21/306 (2006.01); H01L 21/768 (2006.01)
CPC H01L 29/84 (2013.01) [H01L 21/30625 (2013.01); H01L 21/76843 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method for producing a semiconductor transducer device, the method comprising:
providing a semiconductor body;
forming a sacrificial layer above a surface of the semiconductor body;
applying a diaphragm on the sacrificial layer; and
removing the sacrificial layer by introducing an etchant into openings of the diaphragm,
wherein applying the diaphragm comprises:
applying a first layer comprising tungsten, wherein the first layer is a layer of a finished diaphragm with a largest thickness,
reducing a roughness of a surface of the first layer facing away from the semiconductor body thereby providing a processed surface, and
patterning and structuring the first layer to form the openings,
wherein applying the diaphragm comprises applying a third layer comprising at least one of titanium or titanium nitride,
wherein the first layer is applied on a surface of the third layer facing away from the semiconductor body, and
wherein the processed surface has a roughness profile with an arithmetic average between 2 nm and 10 nm inclusive.