US 12,191,392 B2
Semiconductor device including two-dimensional material
Van Luan Nguyen, Suwon-si (KR); Minsu Seol, Seoul (KR); Eunkyu Lee, Yongin-si (KR); Junyoung Kwon, Seoul (KR); Hyeonjin Shin, Suwon-si (KR); and Minseok Yoo, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Oct. 20, 2021, as Appl. No. 17/505,955.
Claims priority of application No. 10-2021-0010354 (KR), filed on Jan. 25, 2021.
Prior Publication US 2022/0238721 A1, Jul. 28, 2022
Int. Cl. H01L 29/786 (2006.01); H01L 29/16 (2006.01); H01L 29/24 (2006.01)
CPC H01L 29/78606 (2013.01) [H01L 29/1606 (2013.01); H01L 29/24 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a semiconductor layer comprising a two-dimensional (2D) material having a layered structure;
an adhesive layer adhering the substrate to the semiconductor layer; and
an electrode spaced apart from the semiconductor layer such that an insulator separates the electrode and the semiconductor layer and such that the electrode corresponds to a channel region in the semiconductor layer, and
wherein an adhesive energy between the adhesive layer and the 2D material is two or more times greater than an adhesive energy between the substrate and the 2D material.