| CPC H01L 29/7813 (2013.01) [H01L 29/1608 (2013.01); H01L 29/66734 (2013.01)] | 15 Claims |
|
1. A power semiconductor device comprising:
a first trench recessed into a semiconductor layer in a first direction from a surface of the semiconductor layer and extending in a second direction which is different from the first direction;
a source contact region spaced apart from the first trench in the second direction;
a well region including a first well region which is in contact with the first trench and a second well region which is in contact with the first trench and is spaced apart from the first well region; and
a drift region including a vertical portion of the drift region which is in contact with the first trench and is disposed between the first well region and the second well region;
wherein the vertical portion of the drift region is in contact with the surface of the semiconductor layer.
|