US 12,191,383 B2
Semiconductor device with an insulating region formed between a control electrode and a conductive element and method of fabrication therefor
Bruce Mcrae Green, Gilbert, AZ (US); Ibrahim Khalil, Gilbert, AZ (US); and Bernhard Grote, Phoenix, AZ (US)
Assigned to NXP USA, Inc., Austin, TX (US)
Filed by NXP USA, INC., Austin, TX (US)
Filed on Dec. 24, 2021, as Appl. No. 17/561,796.
Prior Publication US 2023/0207676 A1, Jun. 29, 2023
Int. Cl. H01L 29/778 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7786 (2013.01) [H01L 29/402 (2013.01); H01L 29/66462 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor substrate comprising an upper surface and a channel;
a first dielectric layer disposed over the upper surface of the semiconductor substrate;
a first current-carrying electrode and a second current-carrying electrode formed over the semiconductor substrate, wherein the first current-carrying electrode and the second current-carrying electrode are electrically coupled to the channel;
a control electrode formed over the semiconductor substrate and disposed between the first current-carrying electrode and the second current-carrying electrode, wherein the control electrode is electrically coupled to the channel, and wherein the control electrode includes a first sidewall portion nearer the first current-carrying electrode that extends upward from the first dielectric layer, and the control electrode includes a second sidewall portion nearer the second current-carrying electrode that extends upward from the first dielectric layer;
a conductive element, formed over the first dielectric layer, adjacent the control electrode, and between the control electrode and the second current-carrying electrode, wherein the conductive element further comprises a first region formed directly on the first dielectric layer at a first distance from the upper surface of the semiconductor substrate and a second region formed over the first dielectric layer at a second distance from the upper surface of the semiconductor substrate, and wherein the second distance is greater than the first distance; and
an insulating region formed adjacent the control electrode, wherein the insulating region includes a first portion formed laterally adjacent the first sidewall portion of the control electrode, nearer the first current-carrying electrode, and a second portion formed laterally adjacent the second sidewall portion of the control electrode, nearer the second current-carrying electrode, wherein the first portion and the second portion are formed over the first dielectric layer, and wherein the second portion is formed between the control electrode and the conductive element.