US 12,191,382 B2
High electron mobility transistor with source and drain electrodes below the channel
Cezar Bogdan Zota, Rueschlikon (CH); Thomas Morf, Ruschlikon (CH); Eunjung Cha, Adliswill (CH); and Peter Mueller, Zurich (CH)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Dec. 5, 2021, as Appl. No. 17/542,485.
Prior Publication US 2023/0178642 A1, Jun. 8, 2023
Int. Cl. H01L 29/778 (2006.01); H01L 29/12 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7783 (2013.01) [H01L 29/122 (2013.01); H01L 29/66462 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor transistor structure, comprising:
a source electrode;
a drain electrode on a same plane as the source electrode;
a channel region on top of the source and drain electrodes and configured to carry a current; and
a gate structure comprising a metallic material on top of the channel region, wherein:
the source and drain electrodes are located on a side that is opposite to that of the gate structure, with respect to the channel region; and
the gate structure is T shaped.