	US 12,191,378 B2
	Fin field effect transistor device structure
Ta-Chun Ma, New Taipei (TW); and Yee-Chia Yeo, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 11, 2022, as Appl. No. 17/669,688.
Application 17/669,688 is a division of application No. 16/900,105, filed on Jun. 12, 2020, granted, now 11,257,932.
Claims priority of provisional application 62/967,731, filed on Jan. 30, 2020.
Prior Publication US 2022/0165869 A1, May 26, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01)

CPC H01L 29/66795 (2013.01) [H01L 21/02667 (2013.01); H01L 29/1041 (2013.01); H01L 29/7851 (2013.01)]

20 Claims

1. A fin field effect transistor device structure, comprising:

a fin structure formed over a substrate;

a liner layer and an isolation structure surrounding the fin structure;

a gate dielectric layer formed over the fin structure and the isolation structure;

a gate structure formed over the gate dielectric layer; and

source/drain epitaxial structures formed on opposite sides of the gate structure;

wherein the fin structure comprises a protruding portion laterally extending over the liner layer.