US 12,191,372 B2
Crystal, semiconductor element and semiconductor device
Ryohei Kanno, Kyoto (JP); Osamu Imafuji, Kyoto (JP); Kazuyoshi Norimatsu, Kyoto (JP); and Yuji Kato, Kyoto (JP)
Assigned to FLOSFIA INC., Kyoto (JP)
Filed by FLOSFIA INC., Kyoto (JP)
Filed on Sep. 23, 2022, as Appl. No. 17/951,512.
Application 17/951,512 is a division of application No. 17/145,651, filed on Jan. 11, 2021, abandoned.
Claims priority of application No. 2020-002605 (JP), filed on Jan. 10, 2020.
Prior Publication US 2023/0019414 A1, Jan. 19, 2023
Int. Cl. H01L 29/45 (2006.01); H01L 23/367 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01); H02M 3/335 (2006.01)
CPC H01L 29/45 (2013.01) [H01L 23/3675 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/872 (2013.01); H02M 3/33569 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A multilayer structure comprising:
a semiconductor layer including a dopant and a corundum structured crystalline oxide semiconductor as a major component, the corundum structured crystalline oxide semiconductor containing a first metal that is gallium and/or indium;
a crystal film on the semiconductor layer, the crystal film including a corundum structured crystalline oxide, the corundum structured crystalline oxide containing a second metal of Group 4 of the periodic table and a third metal that is gallium and/or indium; and
a metal layer on the crystal film, the metal layer including a fourth metal of Group 4 of the periodic table as a major component, wherein
a composition ratio of the second metal to the second and third metals contained in the crystal film is greater than a composition ratio of the dopant to the semiconductor layer.