US 12,191,367 B2
Multi-finger transistor structure and method of manufacturing the same
Su Xing, Singapore (SG); Purakh Raj Verma, Singapore (SG); Rudy Octavius Sihombing, North Sumatera (ID); Shyam Parthasarathy, Singapore (SG); and Jinyu Liao, Singapore (SG)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on May 25, 2022, as Appl. No. 17/752,888.
Claims priority of application No. 202111397934.X (CN), filed on Nov. 19, 2021.
Prior Publication US 2023/0163184 A1, May 25, 2023
Int. Cl. H01L 29/423 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01)
CPC H01L 29/4238 (2013.01) [H01L 21/823418 (2013.01); H01L 21/823481 (2013.01); H01L 29/0653 (2013.01); H01L 29/41758 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A multi-finger transistor structure, comprising:
multiple active areas;
a gate structure, comprising multiple gate parts and multiple connecting parts, wherein each said gate part traverses one of said active areas, and each connecting part alternatively connect one end and the other end of two adjacent said gate parts, so as to form meander said gate structure;
multiple sources and drains, wherein one of said sources and one of said drains are set between two adjacent said gate parts, and one of said sources and one of said drains are set at two sides of each said gate part, and a distance between said drain and corresponding said gate part is larger than a distance between said source and corresponding said gate part; and
air gaps in a dielectric layer between each said drain and corresponding said gate part.