US 12,191,356 B2
Semiconductor device including silicon carbide region containing oxygen
Tatsuo Shimizu, Shinagawa (JP)
Assigned to KABUSHIKI KAISHA TOSHIBA, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP)
Filed on Sep. 8, 2021, as Appl. No. 17/447,074.
Claims priority of application No. 2021-048710 (JP), filed on Mar. 23, 2021.
Prior Publication US 2022/0310791 A1, Sep. 29, 2022
Int. Cl. H01L 29/10 (2006.01); B60L 53/20 (2019.01); H01L 29/16 (2006.01); H01L 29/167 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); B66B 11/04 (2006.01); H01L 21/04 (2006.01); H01L 29/04 (2006.01); H01L 29/423 (2006.01); H02P 27/06 (2006.01)
CPC H01L 29/1045 (2013.01) [B60L 53/20 (2019.02); H01L 29/167 (2013.01); H01L 29/66068 (2013.01); H01L 29/7813 (2013.01); B66B 11/043 (2013.01); H01L 21/045 (2013.01); H01L 29/045 (2013.01); H01L 29/1608 (2013.01); H01L 29/4236 (2013.01); H01L 29/7825 (2013.01); H02P 27/06 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a silicon carbide layer having a first face and a second face opposite to the first face and including:
a first trench provided on a side of the first face and extending in a first direction parallel to the first face;
a second trench provided on the side of the first face, extending in the first direction, and having a distance of 100 nm or less from the first trench in a second direction parallel to the first face and perpendicular to the first direction;
a first silicon carbide region of n-type;
a second silicon carbide region of p-type provided between the first silicon carbide region and the first face and provided between the first trench and the second trench;
a third silicon carbide region of n-type provided between the second silicon carbide region and the first face and provided between the first trench and the second trench;
a fourth silicon carbide region provided between the first trench and the second silicon carbide region and containing oxygen; and
a fifth silicon carbide region provided between the second trench and the second silicon carbide region and containing oxygen;
a first gate electrode provided in the first trench;
a second gate electrode provided in the second trench;
a first gate insulating layer provided between the first gate electrode and the silicon carbide layer;
a second gate insulating layer provided between the second gate electrode and the silicon carbide layer;
a first electrode provided on the side of the first face of the silicon carbide layer and electrically connected to the third silicon carbide region; and
a second electrode provided on a side of the second face of the silicon carbide layer,
wherein the fourth silicon carbide region contains an oxygen atom bonded to four silicon atoms, and
the fifth silicon carbide region contains an oxygen atom bonded to four silicon atoms.