| CPC H01L 29/0649 (2013.01) [H01L 21/764 (2013.01); H01L 29/407 (2013.01); H01L 29/66704 (2013.01); H01L 29/7813 (2013.01)] | 20 Claims |
|
1. A structure for a laterally-diffused metal-oxide-semiconductor device, the structure comprising:
a semiconductor substrate including a trench, the trench having a first sidewall and a second sidewall;
a first dielectric layer inside the trench, the first dielectric layer comprising a first dielectric material;
a source in the semiconductor substrate, the source adjacent to the first sidewall of the trench;
a drain in the semiconductor substrate, the drain adjacent to the second sidewall of the trench;
a gate in the first dielectric layer, the gate laterally between the first sidewall of the trench and the second sidewall of the trench;
a second dielectric layer comprising a second dielectric material; and
an air gap in the first dielectric layer, the air gap below the gate, and the air gap laterally between the first sidewall of the trench and the second sidewall of the trench,
wherein the air gap is fully surrounded by the first dielectric material and the second dielectric material.
|