US 12,191,348 B2
Capacitors of semiconductor device capable of operating in high frequency operation environment
Jaeho Lee, Seoul (KR); Boeun Park, Hwaseong-si (KR); Younggeun Park, Suwon-si (KR); and Jooho Lee, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 7, 2023, as Appl. No. 18/462,909.
Application 18/462,909 is a continuation of application No. 17/098,915, filed on Nov. 16, 2020, granted, now 11,791,372.
Claims priority of application No. 10-2020-0048312 (KR), filed on Apr. 21, 2020.
Prior Publication US 2023/0420487 A1, Dec. 28, 2023
Int. Cl. H01L 23/66 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/56 (2013.01) [H01L 23/66 (2013.01); H01L 28/75 (2013.01); H01L 2223/6661 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A capacitor comprising:
a first electrode layer;
a dielectric layer on the first electrode layer; and
a second electrode layer on the dielectric layer,
wherein the dielectric layer comprises a plurality of unit dielectric layers sequentially stacked and configured to be in contact with each other, a first unit dielectric layer of the plurality of unit dielectric layers comprises two sub-dielectric layers, and a second unit dielectric layer of the plurality of unit dielectric layers comprises two sub-dielectric layers, and
wherein each of the two sub-dielectric layers comprises a first sub-dielectric layer and a second sub-dielectric layer, the first sub-dielectric layer and the second sub-dielectric layer having different dielectric constants and conductivities, and are connected in series.