US 12,191,347 B2
High density metal insulator metal capacitor
Wei Kai Shih, Nantou County (TW); and Kuo-Liang Wang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Aug. 8, 2023, as Appl. No. 18/231,754.
Application 18/231,754 is a continuation of application No. 17/502,924, filed on Oct. 15, 2021, granted, now 11,776,991.
Application 17/502,924 is a continuation of application No. 17/021,706, filed on Sep. 15, 2020, granted, now 11,164,935.
Prior Publication US 2023/0387187 A1, Nov. 30, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/522 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/55 (2013.01) [H01L 23/5223 (2013.01); H01L 28/40 (2013.01); H01L 28/60 (2013.01); H01L 28/86 (2013.01); H01L 28/90 (2013.01); H01L 28/91 (2013.01); H01L 28/92 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an insulation layer; and
a dielectric layer comprising:
a first electrode with sidewalls and a bottom surface in contact with the insulation layer,
a second electrode with sidewalls and a bottom surface in contact with the insulation layer, and
an insulator formed between the first electrode and the second electrode, wherein the insulator is coupled to a sidewall of the first electrode and coupled to a sidewall of the second electrode, wherein:
the first electrode is electrically connected to a first voltage,
the second electrode is electrically connected to a second voltage different from the first voltage, and wherein:
the bottom surface of the first electrode has a first shape;
the bottom surface of the second electrode has a second shape; and
the first shape and the second shape have same dimensions and a same area,
the first electrodes are electrically connected to a first voltage via the at least one metal layer;
the second electrodes are electrically connected to a second voltage via the at least one metal layer; and
the first voltage is higher than the second voltage.