US 12,191,346 B1
Selective area metal process for improved metallurgical bonding of aluminum to copper for integrated passive devices in a semiconductor device
Bartlet DeProspo, Atlanta, GA (US); Jose F. Solis Camara, Atlanta, GA (US); and Ryan Wong, Atlanta, GA (US)
Assigned to SARAS MICRO DEVICES, INC., Chandler, AZ (US)
Filed by Saras Micro Devices, Inc., Chandler, AZ (US)
Filed on May 17, 2024, as Appl. No. 18/667,666.
Int. Cl. H01L 23/64 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/40 (2013.01) [H01L 23/642 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for fabricating an integrated passive device with improved metallurgical bonding between dissimilar metal layers, the method comprising:
fixing conducting polymer layers to opposing first and second sides of a device core of a first metal material;
etching a pattern of recesses into the conducting polymer layers to the device core;
applying a vapor phase metal bonding material to at least an exposed surface of the device core, a bonding material layer being formed on the device core;
etching away edges of the bonding material layer;
forming electrode contacts onto the conducting polymer layers;
laminating an insulating dielectric around the device core and the conducting polymer layers, one or more vias being at least partly defined by the insulating dielectric corresponding to the pattern of recesses in the conducting polymer layers;
filling the one or more vias with a second metal material different from the first metal material; and
forming a first terminal metal layer and a second terminal metal layer onto the insulating dielectric, the first terminal metal layer and the second terminal metal layer being connected with the electrode contacts and the one or more vias.