US 12,191,335 B2
Image sensor and method of manufacturing the same
Sang-Su Park, Seoul (KR); Kwansik Kim, Seoul (KR); Changhwa Kim, Hwaseong-si (KR); Taemin Kim, Hwaseong-si (KR); and Gyuhyun Lim, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 9, 2021, as Appl. No. 17/522,142.
Claims priority of application No. 10-2021-0009640 (KR), filed on Jan. 22, 2021.
Prior Publication US 2022/0238571 A1, Jul. 28, 2022
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/1463 (2013.01) [H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14685 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An image sensor comprising:
a substrate having a first surface and a second surface which is opposite to the first surface; and
a pixel isolation portion provided in the substrate, the pixel isolation portion being configured to isolate unit pixels from each other,
wherein the pixel isolation portion comprises:
a first filling insulation pattern extending from the first surface toward the second surface and having an air gap region, the first filling insulation pattern including a first sidewall and a second sidewall which is opposite to the first sidewall;
a conductive structure including a first portion on the first sidewall, a second portion on the second sidewall, and a connection portion connecting the first portion and the second portion; and
an insulating liner provided between the first portion of the conductive structure and the substrate and provided between the second portion of the conductive structure and the substrate;
wherein the image sensor further comprises a fixed charge layer covering the second surface, and
wherein a portion of the fixed charge layer protrudes towards the air gap region.