US 12,191,334 B2
Semiconductor device with buffer layer and method of forming
Ya Chun Teng, Tainan (TW); Yun-Wei Cheng, Taipei (TW); and Chien Ming Sung, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu (TW)
Filed on Nov. 29, 2021, as Appl. No. 17/536,280.
Application 17/536,280 is a division of application No. 16/572,994, filed on Sep. 17, 2019, granted, now 11,189,653.
Prior Publication US 2022/0085090 A1, Mar. 17, 2022
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14629 (2013.01) [H01L 27/14621 (2013.01); H01L 27/1463 (2013.01); H01L 27/14645 (2013.01); H01L 27/14685 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, comprising:
forming a metal structure over a first dielectric layer and overlying a portion of a substrate between a first pixel and a second pixel;
forming a first barrier layer over the metal structure and the first dielectric layer;
removing a first portion of the first barrier layer over the first dielectric layer to expose a top surface of the first dielectric layer;
forming a passivation layer over the top surface of the first dielectric layer after removing the first portion of the first barrier layer; and
forming a color filter over the top surface of the first dielectric layer after forming the passivation layer such that a second portion of the first barrier layer is laterally between the color filter and the metal structure.