	US 12,191,318 B2
	Display panel and display device
Shui He, Xiamen (CN); Ping An, Shanghai (CN); and Yaqi Kuang, Shanghai (CN)
Assigned to Xiamen Tianma Micro-Electronics Co., Ltd., Xiamen (CN)
Filed by Xiamen Tianma Micro-Electronics Co., Ltd., Xiamen (CN)
Filed on Aug. 1, 2023, as Appl. No. 18/229,040.
Application 18/229,040 is a continuation of application No. 17/364,771, filed on Jun. 30, 2021, granted, now 11,749,692.
Claims priority of application No. 202011615429.3 (CN), filed on Dec. 30, 2020.
Prior Publication US 2023/0378196 A1, Nov. 23, 2023
Int. Cl. H01L 27/12 (2006.01)

CPC H01L 27/1248 (2013.01) [H01L 27/1225 (2013.01); H01L 27/1251 (2013.01)]

18 Claims

1. A display panel, comprising:

a base substrate;

a first transistor, a second transistor and a third transistor, wherein the first transistor, the second transistor and the third transistor are formed on the base substrate, wherein the first transistor comprises a first active layer, a first gate, a first source and a first drain, and wherein the first active layer comprises silicon; wherein the second transistor comprises a second active layer, a second gate, a second source, and a second drain, and wherein the second active layer comprises an oxide semiconductor; wherein the third transistor comprises a third active layer, a fourth gate, a third source and a third drain, and the third active layer comprises an oxide semiconductor;

a first insulating layer and a second insulating layer, wherein the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer, and wherein the second insulating layer is disposed on one side of the second active layer facing towards the base substrate; and

a fourth insulating layer and a fifth insulating layer, wherein the fourth insulating layer is disposed on one side of the third active layer facing away from the base substrate and between the third active layer and the fourth gate, and wherein the fifth insulating layer is disposed on one side of the third active layer facing towards the base substrate;

wherein a concentration of oxygen in the first insulating layer is lower than a concentration of oxygen in the second insulating layer, and a concentration of oxygen in the fourth insulating layer is lower than a concentration of oxygen in the fifth insulating layer;

wherein the display panel comprises a pixel circuit and a driver circuit providing a drive signal for the pixel circuit, wherein the driver circuit comprises the second transistor, the pixel circuit comprises the third transistor, and wherein the pixel circuit comprises the first transistor or the driver circuit comprises the first transistor;

wherein a ratio of the concentration of oxygen to a concentration of silicon in the first insulating layer is A, wherein a ratio of the concentration of oxygen to a concentration of silicon in the second insulating layer is B, and A<B.