US 12,191,309 B2
Method to induce strain in finFET channels from an adjacent region
Pierre Morin, Kessel-Lo (BE); and Nicolas Loubet, Guilderland, NY (US)
Assigned to Bell Semiconductor, LLC, Bethlehem, PA (US)
Filed by Bell Semiconductor, LLC, Bethlehem, PA (US)
Filed on Feb. 28, 2024, as Appl. No. 18/589,774.
Application 14/788,737 is a division of application No. 14/027,758, filed on Sep. 16, 2013, granted, now 9,099,559, issued on Aug. 1, 2015.
Application 18/589,774 is a continuation of application No. 18/157,298, filed on Jan. 20, 2023, granted, now 11,948,943.
Application 18/157,298 is a continuation of application No. 17/093,528, filed on Nov. 9, 2020, granted, now 11,587,928, issued on Feb. 21, 2023.
Application 17/093,528 is a continuation of application No. 16/697,103, filed on Nov. 26, 2019, granted, now 10,854,606, issued on Dec. 1, 2020.
Application 16/697,103 is a continuation of application No. 16/035,441, filed on Jul. 13, 2018, granted, now 10,515,965, issued on Dec. 24, 2019.
Application 16/035,441 is a continuation of application No. 15/197,509, filed on Jun. 29, 2016, granted, now 10,043,805, issued on Aug. 7, 2018.
Application 15/197,509 is a continuation of application No. 14/788,737, filed on Jun. 30, 2015, granted, now 9,406,783, issued on Aug. 2, 2016.
Prior Publication US 2024/0203995 A1, Jun. 20, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/092 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 27/0924 (2013.01) [H01L 29/1054 (2013.01); H01L 29/16 (2013.01); H01L 29/1608 (2013.01); H01L 29/165 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/7843 (2013.01); H01L 29/7848 (2013.01); H01L 29/7849 (2013.01); H01L 29/785 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A device comprising:
a substrate;
a finFET formed on the substrate, the finFET comprising:
a strain-inducing base structure vertically above the substrate;
a constraining material laterally adjacent the strain-inducing base structure; and
a fin vertically above the strain-inducing base structure, wherein the strain-inducing base structure induces either a tensile stress or a compressive stress in the fin.