US 12,191,266 B2
Semiconductor device and manufacturing method of semiconductor device
Emiko Inoue, Nonoichi Ishikawa (JP); and Yukie Nishikawa, Nonoichi Ishikawa (JP)
Assigned to KABUSHIKI KAISHA TOSHIBA, Minato-Ku (JP); and TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo (JP)
Filed on Mar. 11, 2022, as Appl. No. 17/692,779.
Claims priority of application No. 2021-153436 (JP), filed on Sep. 21, 2021.
Prior Publication US 2023/0091325 A1, Mar. 23, 2023
Int. Cl. H01L 23/00 (2006.01); H01L 29/423 (2006.01)
CPC H01L 24/05 (2013.01) [H01L 24/03 (2013.01); H01L 29/42304 (2013.01); H01L 29/42376 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/03622 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/05018 (2013.01); H01L 2224/05076 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05084 (2013.01); H01L 2224/05088 (2013.01); H01L 2224/05138 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/05324 (2013.01); H01L 2224/05338 (2013.01); H01L 2224/05344 (2013.01); H01L 2224/05347 (2013.01); H01L 2224/05366 (2013.01); H01L 2224/05384 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/05564 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor substrate;
a first layer formed of an oxide film provided on an upper surface of the semiconductor substrate;
a second layer which is a layer formed on an upper surface of the first layer and at least selectively having a projection and a recess in an upper surface of the second layer, the projection and the recess being deeper than unintentional fine bumps on an upper surface of the second layer, the unintentional fine bumps occurring during manufacturing process for forming the upper surface of the second layer in a planar shape;
a barrier metal formed on the upper surface of the second layer according to a shape of the projection and the recess; and
a pad in close contact with the second layer via the barrier metal.