US 12,191,236 B2
Semiconductor package
Hyeonjeong Hwang, Cheonan-si (KR); Minjung Kim, Cheonan-si (KR); Dongkyu Kim, Anyang-si (KR); and Taewon Yoo, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 23, 2021, as Appl. No. 17/533,606.
Claims priority of application No. 10-2021-0065607 (KR), filed on May 21, 2021.
Prior Publication US 2022/0375829 A1, Nov. 24, 2022
Int. Cl. H01L 23/495 (2006.01); H01L 23/31 (2006.01); H01L 23/49 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 25/18 (2023.01)
CPC H01L 23/49 (2013.01) [H01L 23/3107 (2013.01); H01L 23/49816 (2013.01); H01L 23/49833 (2013.01); H01L 24/73 (2013.01); H01L 25/18 (2013.01); H01L 2224/73204 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor package, comprising:
a first redistribution substrate including a stack of dielectric layers, a first redistribution pattern in the stack of dielectric layers, and at least one first redistribution pad electrically connected to the first redistribution pattern, wherein at least a portion of the at least one first redistribution pad is in a hole defined by an uppermost dielectric layer of the stack of dielectric layers;
a solder ball on a bottom surface of the first redistribution substrate;
a second redistribution substrate;
a semiconductor chip between a top surface of the first redistribution substrate and a bottom surface of the second redistribution substrate;
a conductive structure electrically connecting the first redistribution substrate and the second redistribution substrate, the conductive structure laterally spaced apart from the semiconductor chip and including a first conductive structure and a second conductive structure in direct contact with a top surface of the first conductive structure;
a conductive seed pattern between a corresponding one of the least one first redistribution pad and the first conductive structure; and
a molding layer between the first redistribution substrate and the second redistribution substrate,
wherein a material of the first conductive structure and a material of the second conductive structure is different from a material of the solder ball, the solder ball comprises at least one of tin, bismuth, lead, and silver, and the first conductive structure and the second conductive structure comprise copper,
wherein the first conductive structure includes a pillar and the second conductive structure includes a pillar,
wherein a connection of the first conductive structure and the second conductive structure comprises copper, and
wherein the molding layer directly contacts the at least one first redistribution pad and the conductive seed pattern.