US 12,191,222 B2
Integrated fan out device with a filler-free insulating material
Wei-Chih Chen, Taipei (TW); Sih-Hao Liao, New Taipei (TW); Yu-Hsiang Hu, Hsinchu (TW); and Hung-Jui Kuo, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 15, 2023, as Appl. No. 18/335,294.
Application 18/335,294 is a division of application No. 17/220,722, filed on Apr. 1, 2021, granted, now 11,721,603.
Claims priority of provisional application 63/091,966, filed on Oct. 15, 2020.
Prior Publication US 2023/0326822 A1, Oct. 12, 2023
Int. Cl. H01L 23/31 (2006.01); H01L 23/498 (2006.01)
CPC H01L 23/3178 (2013.01) [H01L 23/3192 (2013.01); H01L 23/49822 (2013.01); H01L 23/49861 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a redistribution structure coupled to a conductive feature of a substrate, the redistribution structure comprising:
a first conductive layer,
a first insulating layer over the first conductive layer, the first insulating layer comprising a first filler-free insulating material,
a second conductive layer over the first insulating layer, the second conductive layer coupled to the first conducting layer, and
a second insulating layer over the second conductive layer, the second insulating layer comprising a second filler-free insulating material, wherein an upper surface of the second insulating layer is wavy, wherein a difference between an average peak of the upper surface and an average valley of the upper surface is between 3 μm and 5 μm; and
a conductive connector electrically coupled to the redistribution structure.