| CPC H01L 21/76879 (2013.01) [C23C 16/0272 (2013.01); C23C 16/045 (2013.01); C23C 16/45525 (2013.01); H01L 21/486 (2013.01); H01L 21/76876 (2013.01)] | 6 Claims |
|
1. A semiconductor device comprising:
a semiconductor substrate including a first surface and a second surface that oppose each other;
an adhesive layer in which the same number of first and second layers having conductivity are alternately laminated in order on the first surface; and
a metal layer formed on the adhesive layer,
wherein the first layer is composed of a material containing an element composing the semiconductor substrate,
the second layer has higher adhesion to the metal layer than that of the first layer,
the adhesive layer has four or more layers including the first and second layers,
among the first layers and the second layers constituting the adhesive layer, excluding the second layer that contacts the metal layer, the first layer that contacts the semiconductor substrate has the largest film thickness, and
among the first layers and the second layers, excluding the first layer that contacts the semiconductor substrate, the second layer that contacts the metal layer has the largest film thickness.
|