	US 12,191,199 B2
	Contact metallization process
Tien-Pei Chou, Hsinchu (TW); Ken-Yu Chang, Hsinchu (TW); Sheng-Hsuan Lin, Hsinchu County (TW); Yueh-Ching Pai, Taichung (TW); and Yu-Ting Lin, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 29, 2021, as Appl. No. 17/216,444.
Application 17/216,444 is a continuation of application No. 15/967,056, filed on Apr. 30, 2018, granted, now 10,964,590.
Claims priority of provisional application 62/586,330, filed on Nov. 15, 2017.
Prior Publication US 2021/0280462 A1, Sep. 9, 2021
Int. Cl. H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01)

CPC H01L 21/76843 (2013.01) [H01L 21/28568 (2013.01); H01L 21/76802 (2013.01); H01L 21/76876 (2013.01)]

20 Claims

1. A method comprising:

depositing a first metal layer to partially fill an opening in a dielectric layer on a substrate;

depositing a second metal layer on the first metal layer to fill the opening, wherein depositing the second metal layer comprises:

sputter depositing the second metal layer from a metal target by applying a first radio frequency (RF) power to bias the metal target;

reflowing the second metal layer by applying a second RF power to bias the substrate; and

changing the first and second RF powers independently to adjust a ratio of the second RF power to the first RF power while reflowing the second metal layer.