US 12,191,169 B2
Systems and methods for faceplate temperature control
Venkata Sharat Chandra Parimi, Sunnyvale, CA (US); Sungwon Ha, Palo Alto, CA (US); and Runyun Pan, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jul. 19, 2020, as Appl. No. 16/932,792.
Prior Publication US 2022/0020612 A1, Jan. 20, 2022
Int. Cl. C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/505 (2006.01); H01L 21/67 (2006.01); H05B 3/28 (2006.01); H05B 6/40 (2006.01); H05B 6/44 (2006.01)
CPC H01L 21/67103 (2013.01) [C23C 16/45565 (2013.01); C23C 16/4557 (2013.01); C23C 16/4586 (2013.01); C23C 16/505 (2013.01); H05B 3/283 (2013.01); H05B 6/40 (2013.01); H05B 6/44 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor processing system comprising:
a chamber body comprising sidewalls and a base, the chamber body defining an interior volume;
a substrate support extending through the base of the chamber body, wherein the substrate support is configured to support a substrate within the interior volume;
a faceplate positioned within the interior volume of the chamber body, wherein the faceplate defines a plurality of apertures through the faceplate;
a faceplate heater seated on the faceplate, wherein the faceplate heater comprises:
a first heater coil extending a first radial distance from center of the faceplate and proximate a first area of the faceplate, and
a second heater coil extending a second radial distance from center of the faceplate and proximate a second area of the faceplate, wherein the first radial distance and second radial distance are the same; and
a sheet of thermally conducting material extending between the faceplate heater and the faceplate.