CPC H01L 21/31116 (2013.01) [C23C 14/225 (2013.01); C23C 16/45563 (2013.01); C23C 16/4583 (2013.01); C23C 16/50 (2013.01); H01J 37/3053 (2013.01); H01J 37/32458 (2013.01); H01J 37/32623 (2013.01); H01J 37/32816 (2013.01); H01L 21/3086 (2013.01); H01L 21/31144 (2013.01); C23C 14/3442 (2013.01); C23C 14/46 (2013.01); H01J 2237/3151 (2013.01); H01J 2237/3321 (2013.01)] | 17 Claims |
1. A ribbon beam plasma enhanced chemical vapor deposition (PECVD) system comprising:
a process chamber containing a platen for supporting a substrate; and
a plasma source disposed adjacent the process chamber and adapted to produce free radicals in a plasma chamber, the plasma chamber having an aperture associated therewith for allowing a beam of the free radicals to exit the plasma chamber, wherein the aperture is defined by a radially-elongated nozzle extending directly from the plasma chamber away from the plasma chamber and having a depth in a range of 7 millimeters to 20 millimeters for collimating the beam of free radicals exiting the plasma chamber, wherein at least a portion of the nozzle is located entirely outside of the plasma chamber, and wherein the nozzle is separate from, is attached to, and extends at least partially into, a sidewall of the plasma chamber;
wherein the process chamber is maintained at a first pressure and the plasma chamber is maintained at a second pressure greater than the first pressure for driving the free radicals from the plasma chamber into the process chamber and onto the substrate;
wherein an entirety of the plasma chamber, including the nozzle, is rotatable for directing the beam toward the platen at an oblique angle relative to a surface of the platen.
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