| CPC H01L 21/3086 (2013.01) [H01L 21/0274 (2013.01)] | 13 Claims |
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1. A method for manufacturing a semiconductor structure, comprising:
providing a substrate, and forming a stabilizing layer on the substrate;
forming a stabilizing structure consisting of a plurality of linear structures and grooves among the linear structures on the stabilizing layer;
forming a hard mask layer covering the stabilizing structure;
forming a mask pattern connected to a top of the linear structures and an inner wall of the grooves on the hard mask layer;
transferring the mask pattern to the substrate; and
removing the mask pattern and the stabilizing structure; and,
wherein forming the mask pattern connected to the top of the linear structures and the inner wall of the grooves on the hard mask layer comprises:
etching the hard mask layer to form a plurality of hard mask layer strips, wherein thehard mask layer strips are arranged at intervals to form the mask pattern; wherein a preset included angle is formed between a length direction of the hard mask layer strips and a length direction of the linear structures.
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