US 12,191,150 B2
Switching device and method for manufacturing the same
Hidemoto Tomita, Nisshin (JP); Takashi Okawa, Nisshin (JP); Toshiyuki Kawaharamura, Kami (JP); and Li Liu, Kami (JP)
Assigned to DENSO CORPORATION, Kariya (JP); TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP); MIRISE Technologies Corporation, Nisshin (JP); and Kochi Prefectural Public University Corporation, Kochi (JP)
Filed by DENSO CORPORATION, Kariya (JP); TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP); MIRISE Technologies Corporation, Nisshin (JP); and Kochi Prefectural Public University Corporation, Kochi (JP)
Filed on Feb. 2, 2022, as Appl. No. 17/590,988.
Claims priority of application No. 2021-029179 (JP), filed on Feb. 25, 2021.
Prior Publication US 2022/0270882 A1, Aug. 25, 2022
Int. Cl. H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/51 (2006.01)
CPC H01L 21/28264 (2013.01) [H01L 21/02164 (2013.01); H01L 21/0228 (2013.01); H01L 29/51 (2013.01); H01L 29/513 (2013.01); H01L 21/02175 (2013.01); H01L 21/02241 (2013.01); H01L 29/2003 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A switching device comprising:
a gallium nitride semiconductor layer; and
a gate insulation film made of silicon oxide and disposed above the gallium nitride semiconductor layer,
wherein an interface between the gallium nitride semiconductor layer and the gate insulation film is either free of a gallium oxide layer or provided with the gallium oxide layer with a thickness of 1 nanometer or smaller, and
a dipole is not formed across the interface between the gallium nitride semiconductor layer and the gate insulation film.