US 12,191,141 B2
Plasma etching method using perfluoroisopropyl vinyl ether
Chang-Koo Kim, Seoul (KR); and Jun-Hyun Kim, Seongnam (KR)
Assigned to AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION, Suwon-si (KR)
Appl. No. 17/917,155
Filed by AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION, Suwon-si (KR)
PCT Filed Feb. 18, 2021, PCT No. PCT/KR2021/002053
§ 371(c)(1), (2) Date Oct. 5, 2022,
PCT Pub. No. WO2021/206287, PCT Pub. Date Oct. 14, 2021.
Claims priority of application No. 10-2020-0041505 (KR), filed on Apr. 6, 2020.
Prior Publication US 2023/0162972 A1, May 25, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01J 37/32 (2006.01)
CPC H01L 21/02164 (2013.01) [H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01J 37/32009 (2013.01); H01J 2237/334 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A plasma etching method comprising:
a first step of vaporizing liquid perfluoroisopropyl vinyl ether (PIPVE);
a second step of supplying a discharge gas containing the vaporized PIPVE and argon gas to a plasma chamber in which an etching target is disposed; and
a third step of discharging the discharge gas to generate plasma and of performing plasma etching on the etching target using the generated plasma.