| CPC H01L 21/02123 (2013.01) [C23C 16/4584 (2013.01); H01L 21/02252 (2013.01)] | 15 Claims |
|
1. A method for manufacturing a semiconductor device, comprising:
supplying a silicon-containing gas to a substrate having a recess formed in a surface of the substrate to deposit a silicon film in the recess;
supplying, to the substrate, a first etching gas having a first etching profile in which an amount of etching for an upper portion of the recess in a depth direction and an amount of etching for a lower portion of the recess in the depth direction are different from each other, to etch the silicon film in the recess;
supplying, to the substrate, a second etching gas having a second etching profile that is different from the first etching profile of the first etching gas to etch the silicon film in the recess; and
additionally depositing the silicon film on the already deposited silicon film etched by the second etching gas,
wherein the first etching gas includes chlorine gas and nitrogen gas, and the second etching gas includes chlorine gas and nitrogen gas, and
wherein a mixing ratio of the chlorine gas and the nitrogen gas in the second etching gas is different from the first etching gas.
|