US 12,191,125 B2
Removing metal contamination from surfaces of a processing chamber
Jengyi Yu, San Ramon, CA (US); Samantha SiamHwa Tan, Newark, CA (US); Seongjun Heo, Dublin, CA (US); Ge Yuan, Fremont, CA (US); and Siva Krishnan Kanakasabapathy, Pleasanton, CA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Filed by Lam Research Corporation, Fremont, CA (US)
Filed on Dec. 8, 2023, as Appl. No. 18/534,027.
Application 18/091,550 is a division of application No. 17/278,750, abandoned, previously published as PCT/US2019/054477, filed on Oct. 3, 2019.
Application 18/534,027 is a continuation of application No. 18/091,550, filed on Dec. 30, 2022, granted, now 11,842,888.
Claims priority of provisional application 62/741,754, filed on Oct. 5, 2018.
Prior Publication US 2024/0112896 A1, Apr. 4, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/44 (2006.01); H01J 37/32 (2006.01)
CPC H01J 37/32862 (2013.01) [C23C 16/4405 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for cleaning surfaces of a substrate processing chamber, comprising:
a) supplying a first gas selected from a group consisting of silicon tetrachloride (SiCl4), carbon tetrachloride (CCl4), a hydrocarbon (CxHy where x and y are integers) and molecular chlorine (Cl2), boron trichloride (BCl3), and thionyl chloride (SOCl2), wherein the first gas is configured to selectively etch tin (Sn) relative to silicon (Si);
b) striking plasma in the substrate processing chamber with the first gas to selectively etch Sn relative to Si from the surfaces of the substrate processing chamber; and
c) extinguishing the plasma struck in b) and evacuating the substrate processing chamber.