	US 12,191,124 B2
	Plasma processing apparatus and plasma processing method
Tatsuo Matsudo, Yamanashi (JP); and Yasushi Morita, Yamanashi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Appl. No. 18/022,921
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
PCT Filed Aug. 24, 2021, PCT No. PCT/JP2021/031028 § 371(c)(1), (2) Date Feb. 23, 2023, PCT Pub. No. WO2022/050136, PCT Pub. Date Mar. 10, 2022.
Claims priority of application No. 2020-149731 (JP), filed on Sep. 7, 2020.
Prior Publication US 2023/0307215 A1, Sep. 28, 2023
Int. Cl. C23C 16/505 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01)

CPC H01J 37/32834 (2013.01) [C23C 16/505 (2013.01); C23C 16/52 (2013.01); H01J 37/32082 (2013.01); H01J 37/32449 (2013.01); H01J 37/32541 (2013.01); H01J 37/32568 (2013.01); H01J 37/32577 (2013.01); H01J 2237/182 (2013.01); H01J 2237/24564 (2013.01); H01J 2237/332 (2013.01)]

16 Claims

9. A plasma processing method comprising:

(a) preparing a substrate on a substrate support in a chamber of a plasma processing apparatus, the substrate support including a lower electrode;

(b) supplying a gas into the chamber, a pressure of the gas in the chamber being set to a pressure of 26.66 Pa or higher; and

(c) supplying high-frequency power to an upper electrode, the upper electrode being provided above the substrate support;

wherein in a state where the pressure of the gas in the chamber is set to 26.66 Pa or higher in the (b), the high-frequency power having a frequency lower than 13.56 MHz is supplied to the upper electrode in the (c), and

during a period in which the (c) is performed, an impedance of an impedance circuit connected between the lower electrode and ground is set such that an impedance of an electrical path from the lower electrode through the impedance circuit to the ground is higher than an impedance of an electrical path from a wall of the chamber to the ground.