US 12,191,121 B2
Plasma processing apparatus
Kazuyuki Ikenaga, Tokyo (JP); Masaki Ishiguro, Tokyo (JP); Masahiro Sumiya, Tokyo (JP); and Shigeru Shirayone, Tokyo (JP)
Assigned to HITACHI HIGH-TECH CORPORATION, Tokyo (JP)
Filed by HITACHI HIGH-TECH CORPORATION, Tokyo (JP)
Filed on Jul. 18, 2022, as Appl. No. 17/866,687.
Application 17/866,687 is a division of application No. 14/834,404, filed on Aug. 24, 2015, granted, now 11,424,108.
Claims priority of application No. 2014-253583 (JP), filed on Dec. 16, 2014.
Prior Publication US 2022/0359172 A1, Nov. 10, 2022
Int. Cl. H01L 21/00 (2006.01); C23C 16/00 (2006.01); H01J 37/32 (2006.01)
CPC H01J 37/32715 (2013.01) [H01J 37/32568 (2013.01); H01J 37/32577 (2013.01); H01J 37/32697 (2013.01); H01J 37/32706 (2013.01); H01J 37/32724 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a processing chamber in which a sample is plasma-treated;
a radio-frequency power source for supplying radio-frequency power used to generate plasma;
a sample stage which is provided with electrodes for electrostatically adsorbing the sample and on which the sample is mounted;
a DC power supply for applying DC voltages to the electrodes; and
a controller which executes a sequence of programmed instructions to cause the controller to be configured to control the DC power supply so as to apply such DC voltages as to decrease the absolute value of the potential of the sample on the basis of a temperature of the sample stage or a difference of temperatures within the sample stage in the absence of the plasma,
wherein the controller is configured to control the DC power supply to maintain a potential of the sample stage to be 0 VDC between periods of plasma processing of the sample according to a stored relationship between coolant temperature values and resistance values.