CPC H01J 37/32495 (2013.01) [C04B 35/10 (2013.01); C04B 35/12 (2013.01); C04B 35/14 (2013.01); C04B 35/62222 (2013.01); C23C 16/402 (2013.01); C23C 16/403 (2013.01); C23C 16/405 (2013.01); C23C 16/45525 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3241 (2013.01); C04B 2235/3418 (2013.01); C04B 2235/9669 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01); H01L 21/67069 (2013.01); H01L 21/67075 (2013.01)] | 14 Claims |
1. A coating method comprising:
forming a bonding layer on a metal substrate, wherein the bonding layer comprises an oxide of a metal in the metal substrate;
depositing a stress buffer layer on the bonding layer, wherein the stress buffer layer comprises a coefficient of thermal expansion (CTE) that is less than a coefficient of thermal expansion of the metal substrate and a coefficient of thermal expansion of the bonding layer;
depositing an environmental barrier layer on the stress buffer layer, wherein a ratio of the coefficient of thermal expansion of the metal substrate to a coefficient of thermal expansion of the environmental barrier layer is greater than or about 20:1, wherein the coefficient of thermal expansion of the environmental barrier layer is less than the coefficient of thermal expansion of the stress buffer layer, and wherein the environmental barrier layer comprises silicon oxide.
|