US 12,191,119 B2
Substrate processing apparatus and gas switching method for substrate processing apparatus
Nobutaka Sasaki, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Aug. 6, 2021, as Appl. No. 17/395,529.
Claims priority of application No. 2020-138068 (JP), filed on Aug. 18, 2020.
Prior Publication US 2022/0059323 A1, Feb. 24, 2022
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32449 (2013.01) [H01J 37/32834 (2013.01); H01J 2237/24585 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A substrate processing apparatus, comprising:
a processing chamber configured to execute a processing on a substrate by an introduced gas;
an exhaust chamber configured to exhaust a gas existing in the processing chamber;
a partition plate having a plurality of gas passing holes for bringing the processing chamber and the exhaust chamber into communication with each other therethrough;
a measuring instrument configured to measure a state in the processing chamber;
a first pipe configured to connect the processing chamber and the measuring instrument;
a second pipe configured to bring the exhaust chamber and the measuring instrument into communication with each other therethrough via a first valve; and
a controller,
wherein the controller is configured to control the substrate processing apparatus to open the first valve to discharge a first gas into the exhaust chamber through the second pipe while allowing a second gas to reach the measuring instrument through the first pipe, when switching from a first processing condition to a second processing condition, and
wherein the first gas is different from the second gas.