US 12,191,116 B2
Plasma processing apparatus and plasma processing method
Kazushi Kaneko, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Oct. 8, 2021, as Appl. No. 17/497,559.
Claims priority of application No. 2020-170750 (JP), filed on Oct. 8, 2020.
Prior Publication US 2022/0115208 A1, Apr. 14, 2022
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32165 (2013.01) [H01J 37/32174 (2013.01); H01J 37/3244 (2013.01); H01J 2237/334 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a processing chamber configured to accommodate a substrate;
a gas supply configured to supply a processing gas into the processing chamber;
a power supply configured to supply power to the processing chamber to generate plasma from the processing gas supplied into the processing chamber such that the substrate is processed by using the generated plasma; and
a control circuit configured to control the power supply,
wherein the control circuit controls the power supply to perform (a) a first process of supplying a first power including a frequency component within a first band having a first bandwidth to the processing chamber, when the plasma is generated from the processing gas, and (b) a process of supplying a second power including a frequency component within a second band having a second bandwidth to the processing chamber, and not supplying the first power, when the substrate is processed by using the generated plasma,
wherein the second bandwidth is smaller than the first bandwidth.