US 12,191,114 B2
Semiconductor reaction chamber and atomic layer plasma etching apparatus
Xingfei Mao, Beijing (CN); Masaya Odagiri, Beijing (CN); Gang Wei, Beijing (CN); and Guodong Chen, Beijing (CN)
Assigned to BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD., Beijing (CN)
Appl. No. 17/924,342
Filed by BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD., Beijing (CN)
PCT Filed May 7, 2021, PCT No. PCT/CN2021/092080
§ 371(c)(1), (2) Date Nov. 9, 2022,
PCT Pub. No. WO2021/227943, PCT Pub. Date Nov. 18, 2021.
Claims priority of application No. 202010387430.9 (CN), filed on May 9, 2020.
Prior Publication US 2023/0187173 A1, Jun. 15, 2023
Int. Cl. H01J 37/00 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01)
CPC H01J 37/32119 (2013.01) [H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H01J 2237/334 (2013.01); H01L 21/67069 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor reaction chamber comprising:
a reaction chamber body;
a dielectric window arranged above the reaction chamber body, a plasma generation area being located below the dielectric window;
a spray head arranged between the dielectric window and a top wall of the reaction chamber body and dividing the plasma generation area into a strong plasma area at an upper part and a weak plasma area at a lower part, the spray head being arranged at the dielectric window to introduce plasma generating gas into the strong plasma area, a plurality of through-holes being distributed in a central area of the spray head and configured to allow a plasma in the strong plasma area to pass through, an edge area of the spray head being provided with a first gas channel, and a gas outlet end of the first gas channel being communicated with the weak plasma area; and
a process reaction gas inlet member located on a side where a gas inlet end of the first gas channel of the spray head is located, a second gas channel being arranged in the process reaction gas inlet member, and the second gas channel being configured to introduce a process reaction gas into the weak plasma area; wherein the process reaction gas is different from the plasma generating gas.