US 12,191,112 B2
System and method for defect inspection using voltage contrast in a charged particle system
Wei Fang, Milpitas, CA (US); Zhengwei Zhou, San Jose, CA (US); and Lingling Pu, San Jose, CA (US)
Assigned to ASML Netherlands B.V., Veldhoven (NL)
Appl. No. 17/786,190
Filed by ASML NETHERLANDS B.V., Veldhoven (NL)
PCT Filed Dec. 17, 2020, PCT No. PCT/EP2020/086903
§ 371(c)(1), (2) Date Jun. 16, 2022,
PCT Pub. No. WO2021/123075, PCT Pub. Date Jun. 24, 2021.
Claims priority of provisional application 62/950,786, filed on Dec. 19, 2019.
Prior Publication US 2023/0012946 A1, Jan. 19, 2023
Int. Cl. H01J 37/24 (2006.01); H01J 37/244 (2006.01); H01J 37/26 (2006.01); H01J 37/28 (2006.01)
CPC H01J 37/28 (2013.01) [H01J 37/243 (2013.01); H01J 37/244 (2013.01); H01J 37/263 (2013.01); H01J 37/265 (2013.01); H01J 2237/2817 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A charged particle multi-beam system for generating a plurality of beams for inspecting a wafer positioned on a stage, the system comprising:
a controller including circuitry configured to:
position the stage at a first position to enable a first beam of the plurality of beams to scan a first surface area of the wafer at a first time to generate a first image associated with the first surface area;
position the stage at a second position to enable a second beam of the plurality of beams to scan the first surface area at a second time to generate a second image associated with the first surface area; and
compare the first image with the second image to enable detecting whether a defect is identified in the first surface area of the wafer.