US 12,190,962 B2
Nonvolatile memory writing device
Atsushi Kajita, Tokyo (JP); and Choji Hirota, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Apr. 25, 2022, as Appl. No. 17/728,229.
Claims priority of application No. 2021-088067 (JP), filed on May 26, 2021; and application No. 2021-184522 (JP), filed on Nov. 12, 2021.
Prior Publication US 2022/0383957 A1, Dec. 1, 2022
Int. Cl. G11C 16/10 (2006.01); G11C 16/22 (2006.01); G11C 16/30 (2006.01); B60R 16/033 (2006.01)
CPC G11C 16/22 (2013.01) [G11C 16/10 (2013.01); G11C 16/30 (2013.01); B60R 16/033 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A nonvolatile memory writing device wherein,
a nonvolatile memory writing device that writes write data transmitted from a microcomputer to a nonvolatile memory is provided outside the microcomputer,
the nonvolatile memory is connected to a power supply of the microcomputer, and is one in which writing of the writing data is protected and the protection is disabled by an electric signal from the microcomputer to a write-protect terminal of the nonvolatile memory,
the write-protect terminal is connected to a ground of a negative power supply side of the power supply of the microcomputer via a resistor,
when a voltage drop is detected by a monitoring function part that monitors the power supply, the electric signal from the microcomputer to the write-protect terminal is interrupted and an output from the microcontroller to the write-protect terminal becomes high-impedance, and the protection is disabled.