US 12,190,956 B2
Memory device and method of operating the memory device
Jae Woong Kim, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Apr. 14, 2022, as Appl. No. 17/720,998.
Claims priority of application No. 10-2021-0093055 (KR), filed on Jul. 15, 2021.
Prior Publication US 2023/0018605 A1, Jan. 19, 2023
Int. Cl. G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/28 (2006.01); G11C 16/34 (2006.01)
CPC G11C 16/102 (2013.01) [G11C 16/08 (2013.01); G11C 16/28 (2013.01); G11C 16/3404 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method of operating a memory device, the method comprising:
applying any one of a plurality of read voltages to a selected word line;
applying a first pass voltage to unselected word lines while a first read voltage for determining a program state of memory cells having a threshold voltage higher than a reference voltage among the plurality of read voltages is applied to the selected word line; and
applying a second pass voltage higher than the first pass voltage to the unselected word lines while a second read voltage for determining a program state of memory cells having a threshold voltage lower than the reference voltage among the plurality of read voltages is applied to the selected word line.