| CPC G11C 13/0069 (2013.01) [G11C 13/0007 (2013.01); G11C 13/003 (2013.01); G11C 2013/0078 (2013.01); G11C 2213/32 (2013.01); G11C 2213/72 (2013.01); G11C 2213/79 (2013.01)] | 18 Claims |
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1. A variable resistance nonvolatile storage device comprising:
a variable resistance element having a state reversibly changeable between a high resistance state and a low resistance state; and
a current supply circuit that supplies the variable resistance element with a low-resistance changing current for changing the state from the high resistance state to the low resistance state,
wherein the low-resistance changing current has a waveform that includes a first period and a second period along a time axis, the second period being subsequent to the first period,
the current supply circuit applies to the variable resistance element:
a first current during the first period; and
a second current during the second period, the second current being smaller than the first current,
the first current is not zero at an end of the first period, and
the second current is not zero at a start of the second period.
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